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Ultra low-k dielectrics are one of the key components  which allow for further shrinking of the the interconnect system used in todays semiconductor technology. During manufacturing steps such as trench etching the ULK material is degraded and some repair chemistry is required to restore its k-value. In a recent paper which appeared in Journal of Vacuum Science and technology  [bibcite key=forster2015theoretical] Anja now modeled elementary steps of such an in-situ repair approach by using DFT calculations.  

Anjas work shows, which fragments of the repair molecules are appropriate for the repair of various damaged states. The methodology we demonstrate in this paper allows for a fast screening of potential repair chemicals based on simulations. Thus, expensive and time consuming experimental studies will be replaced by simulations in future.